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50: 3075, 1971. 26. R. J. McIntyre, The distribution of gains in uniformly multiplying avalanche photodiodes: Theory, IEEE Trans. Electron Devices, ED-19: 703, 1972. 27. S. Rakshit, N. B. Chakraborti, and R. , 26: 999, 1983. 28. K. Nishida, K. Taguchi, and Y. Matsumoto, InGaAsP heterojunction avalanche photodiodes with high avalanche gain, Appl. Phys. , 35: 251, 1979. 29. S. R. Forrest, R. G. Smith, and O. K. Kim, IEEE J. Quant. , QE-18: 2040, 1982. 30. K. , InP/InGaAs buried-structure avalanche photodiodes, Electron.

Phys. , 6: 62– 64, 1965. 4. W. N. , 16: 1189–1203, 1973. 5. L. W. Cooke, G. E. Bulman, and G. E. Stillman, Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements, Appl. Phys. , 40: 589, 1982. The parameterization used in calculationg the results in this article were taken from G. E. D. thesis. 6. G. E. Bulman, V. M. Robbins, and G. E. Stillman, The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements, IEEE Trans.

24. D. J. Muehlner, private communication, ca. 1984. 25. S. D. Pesonick, Statistics of a general class of avalanche detectors with applications to optical communication, Bell Syst. Tech. , 50: 3075, 1971. 26. R. J. McIntyre, The distribution of gains in uniformly multiplying avalanche photodiodes: Theory, IEEE Trans. Electron Devices, ED-19: 703, 1972. 27. S. Rakshit, N. B. Chakraborti, and R. , 26: 999, 1983. 28. K. Nishida, K. Taguchi, and Y. Matsumoto, InGaAsP heterojunction avalanche photodiodes with high avalanche gain, Appl.

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